Cilt 18, Sayı 3, Sayfalar 624 - 631 2017-09-30

UNPASSIVATED HIGH OPERATING TEMPERATURE GaInAsSb INFRARED PHOTODETECTOR GROWN ON GaAs SUBSTRATE

Uğur SERİNCAN [1] , Mehmet Erkuş [2] , Onur Şenel [3]

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Ga0.87In0.13As0.4Sb0.96 photodiode structure was grown on semi-insulating 4” GaAs substrate by molecular beam epitaxy. The composition, crystal quality and dislocation density of epilayers were determined by high resolution X-ray diffraction rocking curve measurements. The threading dislocation density of the photodetector structure was calculated from the rotational broadening as ~2.5x108 cm-2. The cutoff wavelength and the peak responsivity of the photodetector were determined as around 2.15 μm and 0.08 A/W at 300 K, respectively. By applying reverse bias (-100 mV) the responsivity value of the photodetector increases more than an order (~0.96 A/W) which is the best value reported up to now. Those results indicate that although there is a large lattice mismatch (~8.4%) between GaAs substrate and the photodetector structure, an acceptable photodetector performance was achieved which is important for reducing photodetector costs.
MBE,GaInAsSb,HRXRD,Photodetector
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Konular Mühendislik ve Temel Bilimler
Dergi Bölümü Araştırma Makalesi
Yazarlar

Yazar: Uğur SERİNCAN
E-posta: userincan@anadolu.edu.tr
Ülke: Turkey


Yazar: Mehmet Erkuş
E-posta: erkus88@gmail.com
Ülke: Turkey


Yazar: Onur Şenel
E-posta: yunis_onur@hotmail.com
Ülke: Turkey


Bibtex @araştırma makalesi { aubtda318136, journal = {Anadolu Üniversitesi Bilim Ve Teknoloji Dergisi A - Uygulamalı Bilimler ve Mühendislik}, issn = {1302-3160}, address = {Anadolu Üniversitesi}, year = {2017}, volume = {18}, pages = {624 - 631}, doi = {10.18038/aubtda.318136}, title = {UNPASSIVATED HIGH OPERATING TEMPERATURE GaInAsSb INFRARED PHOTODETECTOR GROWN ON GaAs SUBSTRATE}, language = {en}, key = {cite}, author = {SERİNCAN, Uğur and Şenel, Onur and Erkuş, Mehmet} }
APA SERİNCAN, U , Erkuş, M , Şenel, O . (2017). UNPASSIVATED HIGH OPERATING TEMPERATURE GaInAsSb INFRARED PHOTODETECTOR GROWN ON GaAs SUBSTRATE. Anadolu Üniversitesi Bilim Ve Teknoloji Dergisi A - Uygulamalı Bilimler ve Mühendislik, 18 (3), 624-631. DOI: 10.18038/aubtda.318136
MLA SERİNCAN, U , Erkuş, M , Şenel, O . "UNPASSIVATED HIGH OPERATING TEMPERATURE GaInAsSb INFRARED PHOTODETECTOR GROWN ON GaAs SUBSTRATE". Anadolu Üniversitesi Bilim Ve Teknoloji Dergisi A - Uygulamalı Bilimler ve Mühendislik 18 (2017): 624-631 <http://dergipark.gov.tr/aubtda/issue/30003/318136>
Chicago SERİNCAN, U , Erkuş, M , Şenel, O . "UNPASSIVATED HIGH OPERATING TEMPERATURE GaInAsSb INFRARED PHOTODETECTOR GROWN ON GaAs SUBSTRATE". Anadolu Üniversitesi Bilim Ve Teknoloji Dergisi A - Uygulamalı Bilimler ve Mühendislik 18 (2017): 624-631
RIS TY - JOUR T1 - UNPASSIVATED HIGH OPERATING TEMPERATURE GaInAsSb INFRARED PHOTODETECTOR GROWN ON GaAs SUBSTRATE AU - Uğur SERİNCAN , Mehmet Erkuş , Onur Şenel Y1 - 2017 PY - 2017 N1 - doi: 10.18038/aubtda.318136 DO - 10.18038/aubtda.318136 T2 - Anadolu Üniversitesi Bilim Ve Teknoloji Dergisi A - Uygulamalı Bilimler ve Mühendislik JF - Journal JO - JOR SP - 624 EP - 631 VL - 18 IS - 3 SN - 1302-3160-2146-0205 M3 - doi: 10.18038/aubtda.318136 UR - http://dx.doi.org/10.18038/aubtda.318136 Y2 - 2017 ER -
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