Yıl 2017, Cilt 18, Sayı 5, Sayfalar 1057 - 1065 2017-12-31

ELECTROTHERMAL CHARACTERIZATION OF PHASE-CHANGE FILMS AND DEVICES

Gokhan Bakan [1]

130 295

The reversible changes in the optical properties of the phase-change materials have made the rewritable optical storage possible which has revolutionized the dissemination of data since 1990s. For the last two decades, the phase-change materials have been studied extensively for its applications as nonvolatile memory elements (phase-change memory (PCM) devices). While the PCM devices were initially considered as replacements for the flash memory, today they promise a universal memory acting as the main memory and the storage unit. Here we demonstrate a simple alternative to study phase-change films and devices for further fundamental studies. The films are deposited using a single sputtering target and the devices are formed using single lithography, deposition and liftoff steps. The electrical resistivity of the films and devices are characterized in a temperature range varying from room temperature to 250 °C. Finally, microscale GST wires are amorphized by melting using self-heating and quenching.

Phase-change devices, nonvolatile memory, electrothermal effects
  • [1] Cil K, Dirisaglik F, Adnane L, Wennberg M, King A, Faraclas A, Akbulut MB, Zhu Y, Lam C, Gokirmak A, Silva H. Electrical Resistivity of Liquid Ge2Sb2Te5 Based on Thin-Film and Nanoscale Device Measurements. IEEE Trans. Electron Devices 2013; 60: 433–437.
  • [2] Kolobov AV, Fons P, Frenkel AI, Ankudinov AL, Tominaga J, Uruga T. Understanding the phase-change mechanism of rewritable optical media. Nat. Mater. 2004; 3: 703–708.
  • [3] Wong HSP, Raoux S, Kim S, Liang J, Reifenberg JP, Rajendran B, Asheghi M, Goodson KE. Phase Change Memory. Proc. IEEE 2010; 98: 2201–2227.
  • [4] Burr GW, Breitwisch MJ, Franceschini M, Garetto D, Gopalakrishnan K, Jackson B, Kurdi B, Lam C, Lastras LA, Padilla A, Rajendran B, Raoux S, Shenoy RS. Phase change memory technology. J. Vac. Sci. Technol. B, Nanotechnol. Microelectron. Mater. Process. Meas. Phenom. 2010; 28: 223–262.
  • [5] Bakan G, Gerislioglu B, Dirisaglik F, Jurado Z, Sullivan L, Dana A, Lam C, Gokirmak A, Silva H. Extracting the temperature distribution on a phase-change memory cell during crystallization. J. Appl. Phys. 2016; 120: 164504.
  • [6] Xiong F, Liao AD, Estrada D, Pop E. Low-power switching of phase-change materials with carbon nanotube electrodes. Science 2011; 332: 568–570.
  • [7] Dirisaglik F, Bakan G, Jurado Z, Muneer S, Akbulut M, Rarey J, Sullivan L, Wennberg M, King A, Zhang L, Nowak R, Lam C, Silva H, Gokirmak A. High speed, high temperature electrical characterization of phase change materials: metastable phases, crystallization dynamics, and resistance drift. Nanoscale 2015; 7: 16625–16630.
  • [8] Gokce A, Cinar I, Ozdemir SC, Cogulu E, Stipe B, Katine JA, Ozatay O. Toward Multiple-Bit-Per-Cell Memory Operation With Stable Resistance Levels in Phase Change Nanodevices. IEEE Trans. Electron Devices 2016; 63: 3103–3108.
  • [9] Kolobov AV, Haines J, Pradel A, Ribes M, Fons P, Tominaga J, Katayama Y, Hammouda T, Uruga T, Agarwal R. Pressure-induced site-selective disordering of Ge2Sb2Te5: a new insight into phase-change optical recording. Phys. Rev. Lett. 2006; 97: 35701.
  • [10] Oosthoek JLM, Attenborough K, Hurkx GAM, Jedema FJ, Gravesteijn DJ, Kooi BJ. Evolution of cell resistance, threshold voltage and crystallization temperature during cycling of line-cell phase-change random access memory. J. Appl. Phys. 2011; 110: 24505.
Konular Mühendislik
Dergi Bölümü Araştırma Makalesi
Yazarlar

Yazar: Gokhan Bakan
Kurum: ATILIM ÜNİVERSİTESİ
Ülke: Turkey


Bibtex @araştırma makalesi { aubtda304357, journal = {ANADOLU UNIVERSITY JOURNAL OF SCIENCE AND TECHNOLOGY A - Applied Sciences and Engineering}, issn = {1302-3160}, eissn = {2146-0205}, address = {Eskişehir Teknik Üniversitesi}, year = {2017}, volume = {18}, pages = {1057 - 1065}, doi = {10.18038/aubtda.304357}, title = {ELECTROTHERMAL CHARACTERIZATION OF PHASE-CHANGE FILMS AND DEVICES}, key = {cite}, author = {Bakan, Gokhan} }
APA Bakan, G . (2017). ELECTROTHERMAL CHARACTERIZATION OF PHASE-CHANGE FILMS AND DEVICES. ANADOLU UNIVERSITY JOURNAL OF SCIENCE AND TECHNOLOGY A - Applied Sciences and Engineering, 18 (5), 1057-1065. Retrieved from http://dergipark.gov.tr/aubtda/issue/31308/304357
MLA Bakan, G . "ELECTROTHERMAL CHARACTERIZATION OF PHASE-CHANGE FILMS AND DEVICES". ANADOLU UNIVERSITY JOURNAL OF SCIENCE AND TECHNOLOGY A - Applied Sciences and Engineering 18 (2017): 1057-1065 <http://dergipark.gov.tr/aubtda/issue/31308/304357>
Chicago Bakan, G . "ELECTROTHERMAL CHARACTERIZATION OF PHASE-CHANGE FILMS AND DEVICES". ANADOLU UNIVERSITY JOURNAL OF SCIENCE AND TECHNOLOGY A - Applied Sciences and Engineering 18 (2017): 1057-1065
RIS TY - JOUR T1 - ELECTROTHERMAL CHARACTERIZATION OF PHASE-CHANGE FILMS AND DEVICES AU - Gokhan Bakan Y1 - 2017 PY - 2017 N1 - DO - T2 - ANADOLU UNIVERSITY JOURNAL OF SCIENCE AND TECHNOLOGY A - Applied Sciences and Engineering JF - Journal JO - JOR SP - 1057 EP - 1065 VL - 18 IS - 5 SN - 1302-3160-2146-0205 M3 - UR - Y2 - 2017 ER -
EndNote %0 Anadolu Üniversitesi Bilim Ve Teknoloji Dergisi A - Uygulamalı Bilimler ve Mühendislik ELECTROTHERMAL CHARACTERIZATION OF PHASE-CHANGE FILMS AND DEVICES %A Gokhan Bakan %T ELECTROTHERMAL CHARACTERIZATION OF PHASE-CHANGE FILMS AND DEVICES %D 2017 %J ANADOLU UNIVERSITY JOURNAL OF SCIENCE AND TECHNOLOGY A - Applied Sciences and Engineering %P 1302-3160-2146-0205 %V 18 %N 5 %R %U
ISNAD Bakan, Gokhan . "ELECTROTHERMAL CHARACTERIZATION OF PHASE-CHANGE FILMS AND DEVICES". ANADOLU UNIVERSITY JOURNAL OF SCIENCE AND TECHNOLOGY A - Applied Sciences and Engineering 18 / 5 (Aralık 2017): 1057-1065.