Yıl 2018, Cilt 19, Sayı 1, Sayfalar 24 - 31 2018-03-31

Effect of N doping on Tl2Ga2S3Se single crystals: Thermoluminescence characterization of defect centers

Serdar Delice [1]

204 185

Thermoluminescence study on nitrogen doped Tl2Ga2S3Se single crystals was achieved by performing the experiments with different stopping temperatures of 10−24 K and various heating rates between 0.4 and 1.2 K/s below room temperature. Thermoluminescence peak with peak maximum temperature of 54 K was detected from the emitted luminescence. Two trap levels were obtained from the observed spectra. Curve fitting and initial rise methods were applied to compute the activation energies and the values of 34 and 70 meV were found. Thermal cleaning process was applied to separate the overlapping peaks and so true energy region of trapping levels was corroborated. Moreover, variation of shape and position of TL curve were studied by investigating the heating rate behavior of trap levels. The best known behavior which the peak maximum temperature increases while the thermoluminescence intensity decreases with raising heating rate was observed. The effect of the N doping on the existed defects was discussed.

Thermoluminescence, defects, N doping
  • [1] Hanias M, Anagnostopoulos A, Kambas K, Spyridelis. Electrical and optical properties of as-grown TlInS2, TlGaSe2 and TlGaS2 single crystals. Mater Res Bull 1992; 27: 25-38.
  • [2] Ashraf I.M, Abdel-Rahman M.M, Badr A.M. Photoconductivity of TlGaSe2 layered single crystals. J Phys D Appl Phys 2003; 36: 109-113.
  • [3] Kato A, Nishigaki M, Mamedov N, Yamazaki M, Abdullaeva S, Kerimova E, Uchiki H, Iida S. Optical properties and photo-induced memory effect related with structural phase transition in TlGaS2. J Phys Chem Solids 2003; 64: 1713-1716.
  • [4] El Nahass M.M, Sallam M.M, Rahman S.A, Ibrahim E.M. Optical,electrical conduction and dielectric properties of TlGaSe2 layered single crystal. Solid State Sci 2006; 8: 488-499.
  • [5] Grivickas V, Bikbajevas V, Grivickas P. Indirect absorption edge of TlGaSe2 crystals. Phys Status Solidi B 2006; 243: R31-R33.
  • [6] Gurbulak B, Duman S. Urbach tail and optical characterization of gadolinium-doped TlGaSe2 single crystals. Phys. Scripta 2008; 77: 025702:1-025702:6.
  • [7] Allakhverdiev K.R. Two-photon absorption in layered TlGaSe2, TlInS2, TlGaS2 and GaSe crystals. Solid State Commun 1999; 111: 253-257.
  • [8] Guler I, Gasanly N.M. Optical properties of TlGaSeS layered single crystals. J Korean Phys Soc 2007; 51: 2031-2035.
  • [9] Panich A.M. Electronic properties and phase transitions in low-dimensional semiconductors. J Phys-Condens Mat 2008; 20: 293202:1-293202:42.
  • [10] Allakhverdiev K.R, Mamedov T.G, Akinoglu B.G, Ellialtioglu S. Phase transitions in ternary layered A3B3C2 6 group ferroelectric semiconductors—A Review. Turk J Phys 1994; 18: 1-66.
  • [11] Yee K.A, Albright A. Bonding and structure of TlGaSe2. J Am Chem Soc 1991; 113: 6474-6478.
  • [12] Muller D, Hahn H. Ternary chalcogenides .24. structure of TlGaSe2. Z Anorg Allg Chem 1978; 438: 258-272.
  • [13] Isik M, Gasanly N.M. Absorption edge and optical constants of Tl2Ga2S3Se crystals from reflection and transmission, and ellipsometric measurements. Physica B 2012; 407: 2229-2233.
  • [14] Gasanly N.M. Low-temperature absorption edge and photoluminescence in layered structured Tl2Ga2S3Se single crystals. Physica B 2012; 407: 4318-4322.
  • [15] Yildirim T, Nasser H.A, Gasanly N.M. Determination of trapping center parameters of Tl2Ga2S3Se layered crystals by thermally stimulated current measurements. Int J Mod Phys B 2010; 24: 2149-2161.
  • [16] Yildirim T, Gasanly N.M. Determination of deep trapping center parameters in as-grown Tl2Ga2S3Se layered crystals. Solid State Sci 2009; 11: 1562-1566.
  • [17] Delice S, Isik M, Bulur E, Gasanly N.M. Thermoluminescence properties of Tl2Ga2S3Se layered single crystals. J Appl Phys 2013; 113: 193510:1-193510:5.
  • [18] Chen R, Kirsh Y. Analysis of Thermally Stimulated Processes. Oxford, New York, USA: Pergamon Press, 1981.
  • [19] Chen R, McKeever S.W.S. Theory of Thermoluminescence and Related Phenomena. Singapore: World Scientific, 1997.
  • [20] Anishia S.R, Jose M.T, Annalakshmi O, Ramasamy V. Thermoluminescence properties of rare earth doped lithium magnesium borate phosphors. J Lumin 2011; 131: 2492-2498.
Konular Mühendislik ve Temel Bilimler
Dergi Bölümü Araştırma Makalesi
Yazarlar

Yazar: Serdar Delice
Ülke: Turkey


Bibtex @araştırma makalesi { aubtda332583, journal = {Anadolu Üniversitesi Bilim Ve Teknoloji Dergisi A - Uygulamalı Bilimler ve Mühendislik}, issn = {1302-3160}, eissn = {2146-0205}, address = {Anadolu Üniversitesi}, year = {2018}, volume = {19}, pages = {24 - 31}, doi = {10.18038/aubtda.332583}, title = {Effect of N doping on Tl2Ga2S3Se single crystals: Thermoluminescence characterization of defect centers}, key = {cite}, author = {Delice, Serdar} }
APA Delice, S . (2018). Effect of N doping on Tl2Ga2S3Se single crystals: Thermoluminescence characterization of defect centers. Anadolu Üniversitesi Bilim Ve Teknoloji Dergisi A - Uygulamalı Bilimler ve Mühendislik, 19 (1), 24-31. DOI: 10.18038/aubtda.332583
MLA Delice, S . "Effect of N doping on Tl2Ga2S3Se single crystals: Thermoluminescence characterization of defect centers". Anadolu Üniversitesi Bilim Ve Teknoloji Dergisi A - Uygulamalı Bilimler ve Mühendislik 19 (2018): 24-31 <http://dergipark.gov.tr/aubtda/issue/36292/332583>
Chicago Delice, S . "Effect of N doping on Tl2Ga2S3Se single crystals: Thermoluminescence characterization of defect centers". Anadolu Üniversitesi Bilim Ve Teknoloji Dergisi A - Uygulamalı Bilimler ve Mühendislik 19 (2018): 24-31
RIS TY - JOUR T1 - Effect of N doping on Tl2Ga2S3Se single crystals: Thermoluminescence characterization of defect centers AU - Serdar Delice Y1 - 2018 PY - 2018 N1 - doi: 10.18038/aubtda.332583 DO - 10.18038/aubtda.332583 T2 - Anadolu Üniversitesi Bilim Ve Teknoloji Dergisi A - Uygulamalı Bilimler ve Mühendislik JF - Journal JO - JOR SP - 24 EP - 31 VL - 19 IS - 1 SN - 1302-3160-2146-0205 M3 - doi: 10.18038/aubtda.332583 UR - http://dx.doi.org/10.18038/aubtda.332583 Y2 - 2017 ER -
EndNote %0 Anadolu Üniversitesi Bilim Ve Teknoloji Dergisi A - Uygulamalı Bilimler ve Mühendislik Effect of N doping on Tl2Ga2S3Se single crystals: Thermoluminescence characterization of defect centers %A Serdar Delice %T Effect of N doping on Tl2Ga2S3Se single crystals: Thermoluminescence characterization of defect centers %D 2018 %J Anadolu Üniversitesi Bilim Ve Teknoloji Dergisi A - Uygulamalı Bilimler ve Mühendislik %P 1302-3160-2146-0205 %V 19 %N 1 %R doi: 10.18038/aubtda.332583 %U 10.18038/aubtda.332583