Year 2019, Volume 40, Issue 1, Pages 158 - 161 2019-03-22

Gausyen Çift Bariyer Potansiyelinin Rezonans Tünelleme Özellikleri ve Elektrik Alan Biasının Etkisi
Resonant Tunneling Properties of Gaussian Double Barrier Potential and Effect of the Electric Field Bias

Mehmet BATI [1]

9 19

Gausyen kuantum çift bariyer yapısı, elektrik alan biası yokluğunda ve varlığında incelenmiştir. Sonlu farklar metodu temelli denge-dışı Green fonksiyonları yöntemi kullanılmıştır. Rezonans enerji seviyesinin ayrıntılı analizi ve sistem parametrelerinin önemi tartışılmıştır. İletim özelliklerinin bariyerlere ve elektrik alan biasına bağımlılığı incelenmiştir. Farklı bariyer şekillerinin verileri ile bir karşılaştırma sunulmuştur.

Resonant tunneling properties of finite Gaussian double quantum barrier structure are studied in the absence and presence of electric field bias. Non-equilibrium Green's function method based on the finite difference method is used. A detailed analysis of the resonant energy level is given and the importance of system parameters is discussed. The dependence of the transmission properties on the barriers and electric field bias are revealed. A comparison between different barrier shape data is presented.

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Primary Language en
Subjects Basic Sciences
Journal Section Natural Sciences
Authors

Orcid: 0000-0001-7154-2198
Author: Mehmet BATI (Primary Author)
Institution: Recep Tayyip Erdogan University
Country: Turkey


Bibtex @research article { csj512878, journal = {Cumhuriyet Science Journal}, issn = {2587-2680}, eissn = {2587-246X}, address = {Cumhuriyet University}, year = {2019}, volume = {40}, pages = {158 - 161}, doi = {10.17776/csj.512878}, title = {Resonant Tunneling Properties of Gaussian Double Barrier Potential and Effect of the Electric Field Bias}, key = {cite}, author = {BATI, Mehmet} }
APA BATI, M . (2019). Resonant Tunneling Properties of Gaussian Double Barrier Potential and Effect of the Electric Field Bias. Cumhuriyet Science Journal, 40 (1), 158-161. DOI: 10.17776/csj.512878
MLA BATI, M . "Resonant Tunneling Properties of Gaussian Double Barrier Potential and Effect of the Electric Field Bias". Cumhuriyet Science Journal 40 (2019): 158-161 <http://dergipark.gov.tr/csj/issue/43798/512878>
Chicago BATI, M . "Resonant Tunneling Properties of Gaussian Double Barrier Potential and Effect of the Electric Field Bias". Cumhuriyet Science Journal 40 (2019): 158-161
RIS TY - JOUR T1 - Resonant Tunneling Properties of Gaussian Double Barrier Potential and Effect of the Electric Field Bias AU - Mehmet BATI Y1 - 2019 PY - 2019 N1 - doi: 10.17776/csj.512878 DO - 10.17776/csj.512878 T2 - Cumhuriyet Science Journal JF - Journal JO - JOR SP - 158 EP - 161 VL - 40 IS - 1 SN - 2587-2680-2587-246X M3 - doi: 10.17776/csj.512878 UR - https://doi.org/10.17776/csj.512878 Y2 - 2018 ER -
EndNote %0 Cumhuriyet Science Journal Resonant Tunneling Properties of Gaussian Double Barrier Potential and Effect of the Electric Field Bias %A Mehmet BATI %T Resonant Tunneling Properties of Gaussian Double Barrier Potential and Effect of the Electric Field Bias %D 2019 %J Cumhuriyet Science Journal %P 2587-2680-2587-246X %V 40 %N 1 %R doi: 10.17776/csj.512878 %U 10.17776/csj.512878
ISNAD BATI, Mehmet . "Resonant Tunneling Properties of Gaussian Double Barrier Potential and Effect of the Electric Field Bias". Cumhuriyet Science Journal 40 / 1 (March 2019): 158-161. https://doi.org/10.17776/csj.512878