Yıl 2018, Cilt 6, Sayı 1, Sayfalar 130 - 138 2018-03-29

CURRENT MODE QUADRATURE OSCILLATOR CIRCUIT DESIGN USING MCBTA ACTIVE COMPONENT
MCBTA AKTİF ELEMANI KULLANILARAK AKIM MODLU DİKGEN SİNÜSOİDAL OSİLATÖR DEVRESİ TASARIMI

Umut Engin AYTEN [1]

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In this study, a new current-mode quadrature sinusoidal oscillator circuit using modified current backward transconductance amplifier (MCBTA) are introduced. A new quadrature sinusoidal oscillator circuit employs two MCBTAs, two grounded capacitors and one grounded resistor. The current outputs of the proposed circuit provide high-frequency sinusoidal oscillation in quadrature at high impedance current output terminals of the MCBTAs. The oscillation condition of the proposed quadrature oscillator is controlled by one resistor and/or (gm) transconductance value of MCBTAs. The validity of the proposed circuits is verified PSPICE simulations. CMOS implementation of the MCBTA is performed for TSMC 0.25 µm process parameters and simulation results are obtained.

Bu çalışmada, Değiştirilmiş Akım Geriyönlü Geçiş-iletkenliği Kuvvetlendiricisi (Modified Current Backward Transconductance Amplifier-MCBTA) aktif elemanı kullanılarak yeni bir akım modlu dikgen sinusoidal osilatör (quadrature oscillator) devresi tasarımı gerçekleştirilmiştir.  Önerilen dikgen sinusoidal osilatör devresi iki adet MCBTA, iki adet bir ucu topraklı kapasite elemanı ve bir adet bir ucu topraklı direnç elemanından oluşmaktadır. Önerilen devrenin akım çıkış uçları yüksek çıkış empedansına sahiptir ve ard arda bağlanmaya uygun yapıdadır. Osilasyon şartı bir direnç elemanı ile ve/veya MCBTA aktif elemanının geçiş iletkenliği parametresi (gm) ile kontrol edilebilmektedir.  Önerilen devrenin doğruluğu PSPICE simülasyonları gerçekleştirilerek gösterilmiştir. MCBTA aktif elemanının CMOS gerçeklemesi TSMC 0.25 µm üretim parametreleri için gerçekleştirilmiş ve simülasyon sonuçları elde edilmiştir. 

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Birincil Dil tr
Konular Mühendislik ve Temel Bilimler
Dergi Bölümü Araştırma Makaleleri \ Research Articles
Yazarlar

Orcid: 0000-0003-4174-1799
Yazar: Umut Engin AYTEN (Sorumlu Yazar)
E-posta: ayten@yildiz.edu.tr
Kurum: Yıldız Teknik Üniversitesi
Ülke: Turkey


Bibtex @araştırma makalesi { jesd375690, journal = {Mühendislik Bilimleri ve Tasarım Dergisi}, issn = {}, address = {Süleyman Demirel Üniversitesi}, year = {2018}, volume = {6}, pages = {130 - 138}, doi = {}, title = {MCBTA AKTİF ELEMANI KULLANILARAK AKIM MODLU DİKGEN SİNÜSOİDAL OSİLATÖR DEVRESİ TASARIMI}, key = {cite}, author = {AYTEN, Umut Engin} }
APA AYTEN, U . (2018). MCBTA AKTİF ELEMANI KULLANILARAK AKIM MODLU DİKGEN SİNÜSOİDAL OSİLATÖR DEVRESİ TASARIMI. Mühendislik Bilimleri ve Tasarım Dergisi, 6 (1), 130-138. Retrieved from http://dergipark.gov.tr/jesd/issue/33308/375690
MLA AYTEN, U . "MCBTA AKTİF ELEMANI KULLANILARAK AKIM MODLU DİKGEN SİNÜSOİDAL OSİLATÖR DEVRESİ TASARIMI". Mühendislik Bilimleri ve Tasarım Dergisi 6 (2018): 130-138 <http://dergipark.gov.tr/jesd/issue/33308/375690>
Chicago AYTEN, U . "MCBTA AKTİF ELEMANI KULLANILARAK AKIM MODLU DİKGEN SİNÜSOİDAL OSİLATÖR DEVRESİ TASARIMI". Mühendislik Bilimleri ve Tasarım Dergisi 6 (2018): 130-138
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