Cilt 22, Sayı 2, Sayfalar 53 - 64 2017-08-20

Investigation of Electrical Characterization of RadFETs For Dİfferent B+ Implantation Conditions With TCAD Simulation Program
FARKLI B+ İMPLANTASYON KOŞULLARI İÇİN RADFET’LERİN ELEKTRİKSEL KARAKTERİZASYONUNUN TCAD BENZETİM PROGRAMI İLE İNCELENMESİ

Ayşegül KAHRAMAN [1] , Ercan YILMAZ [2]

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In this study, the effect of the B+ ions implanted to gate oxide layer of the RadFETs on Vth was investigated by Silvaco TCAD simulation program. The RadFETs with the gate oxide thicknesses of 300 nm and 400 nm were designed by introducing the all of the RadFETs production steps to TCAD. The Vth values were obtained from the current-voltage (Id-Vg) characteristics of the RadFETs before and after implantation. Increasing implantation energy caused the reduction of the Vth values. The zero Vth value is important to produce the RadFET with broader measurable dose range. However, Vth was not observed in the negative voltages with continuous increment in the implantation energy due to the p-channel formation. For the 300 nm-RadFET, the lowest Vth value was found as -1.082 V for boron dose with 6.5×1011 ions/cm2 at 72 keV. This value for 400 nm-RadFET was obtained as -1.139 V for boron dose with 2.3×1011 ions/cm2 at 106 keV.
Bu çalışmada, RadFET’lerin kapı oksit tabakasına implante edilmiş B+ iyonlarının Vth üzerine etkisi, Silvaco TCAD benzetim programı ile incelenmiştir. 300 nm ve 400 nm kalınlıklarında kapı oksite sahip RadFET’ler, tüm üretim adımları TCAD’e tanıtılarak tasarlanmıştır. İmplantasyon öncesi ve sonrası Vth değerleri, RadFET’lerin akım-gerilim (Id-Vg) karakteristiklerinden elde edilmiştir. Artan implantasyon enerjisi, Vth değerlerinin düşmesine neden olmuştur. Vth değerinin sıfır olması, daha geniş ölçülebilir doz aralığına sahip RadFET’lerin üretilmesi için önemlidir. Ancak, implantasyon enerjisindeki sürekli artışla birlikte Vth, p-kanalı oluşumu nedeniyle negatif voltaj değerlerinde gözlenmemiştir. 300 nm-RadFET için en düşük Vth değeri, 6.5×1011 iyon/cm2 bor dozu ve 72 keV’de, -1.082 V olarak bulunmuştur. 400 nm-RadFET için bu değer, 2.3×1011 iyon/cm2 bor dozu ve 106 keV’de, -1.139 V olarak elde edilmiştir.
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Konular Mühendislik ve Temel Bilimler
Dergi Bölümü Araştırma Makaleleri
Yazarlar

Yazar: Ayşegül KAHRAMAN
E-posta: aysegulk@uludag.edu.tr

Yazar: Ercan YILMAZ
E-posta: yilmaz@ibu.edu.tr

Bibtex @araştırma makalesi { uumfd335425, journal = {Uludağ University Journal of The Faculty of Engineering}, issn = {2148-4147}, address = {Uludağ Üniversitesi}, year = {2017}, volume = {22}, pages = {53 - 64}, doi = {10.17482/uumfd.335425}, title = {Investigation of Electrical Characterization of RadFETs For Dİfferent B+ Implantation Conditions With TCAD Simulation Program}, language = {en}, key = {cite}, author = {YILMAZ, Ercan and KAHRAMAN, Ayşegül} } @araştırma makalesi { uumfd335425, journal = {Uludağ University Journal of The Faculty of Engineering}, issn = {2148-4147}, address = {Uludağ Üniversitesi}, year = {2017}, volume = {22}, pages = {53 - 64}, doi = {10.17482/uumfd.335425}, title = {FARKLI B+ İMPLANTASYON KOŞULLARI İÇİN RADFET’LERİN ELEKTRİKSEL KARAKTERİZASYONUNUN TCAD BENZETİM PROGRAMI İLE İNCELENMESİ}, language = {tr}, key = {cite}, author = {YILMAZ, Ercan and KAHRAMAN, Ayşegül} }
APA KAHRAMAN, A , YILMAZ, E . (2017). Investigation of Electrical Characterization of RadFETs For Dİfferent B+ Implantation Conditions With TCAD Simulation Program. Uludağ University Journal of The Faculty of Engineering, 22 (2), 53-64. DOI: 10.17482/uumfd.335425
MLA KAHRAMAN, A , YILMAZ, E . "Investigation of Electrical Characterization of RadFETs For Dİfferent B+ Implantation Conditions With TCAD Simulation Program". Uludağ University Journal of The Faculty of Engineering 22 (2017): 53-64 <http://dergipark.gov.tr/uumfd/issue/30563/335425>
Chicago KAHRAMAN, A , YILMAZ, E . "Investigation of Electrical Characterization of RadFETs For Dİfferent B+ Implantation Conditions With TCAD Simulation Program". Uludağ University Journal of The Faculty of Engineering 22 (2017): 53-64
RIS TY - JOUR T1 - FARKLI B+ İMPLANTASYON KOŞULLARI İÇİN RADFET’LERİN ELEKTRİKSEL KARAKTERİZASYONUNUN TCAD BENZETİM PROGRAMI İLE İNCELENMESİ AU - Ayşegül KAHRAMAN , Ercan YILMAZ Y1 - 2017 PY - 2017 N1 - doi: 10.17482/uumfd.335425 DO - 10.17482/uumfd.335425 T2 - Uludağ University Journal of The Faculty of Engineering JF - Journal JO - JOR SP - 53 EP - 64 VL - 22 IS - 2 SN - 2148-4147-2148-4155 M3 - doi: 10.17482/uumfd.335425 UR - http://dx.doi.org/10.17482/uumfd.335425 Y2 - 2017 ER -
EndNote %0 Uludağ University Journal of The Faculty of Engineering FARKLI B+ İMPLANTASYON KOŞULLARI İÇİN RADFET’LERİN ELEKTRİKSEL KARAKTERİZASYONUNUN TCAD BENZETİM PROGRAMI İLE İNCELENMESİ %A Ayşegül KAHRAMAN , Ercan YILMAZ %T FARKLI B+ İMPLANTASYON KOŞULLARI İÇİN RADFET’LERİN ELEKTRİKSEL KARAKTERİZASYONUNUN TCAD BENZETİM PROGRAMI İLE İNCELENMESİ %D 2017 %J Uludağ University Journal of The Faculty of Engineering %P 2148-4147-2148-4155 %V 22 %N 2 %R doi: 10.17482/uumfd.335425 %U 10.17482/uumfd.335425